New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model
نویسنده
چکیده
We have studied the characteristics of MOSFET degradation induced by hotcarriers. When the characteristics of drain current degradation (A/j) are applied to the stress time(t) dependence AIj oc t, the exponent n is clearly different under different bias conditions. We present a two-type interface-state model composed of deep-energy interface states and shallow-energy interface states which have a different n exponent in order to explain the characteristics of drain current degradation.
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